Moiré patterns and step edges on few-layer graphene grown on nickel films, Chin. Phys. B 2014, 23(11), 11680
Moiré patterns and step edges on few-layer graphene grown on nickel films
Ke Fen a, Yin Xiu-Li a, Tong Nai a, Lin Chen-Fang a, Liu Nan b, Zhao Ru-Guang a, Fu Lei b, Liu Zhong-Fan b, Hu Zong-Hai a c
a State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
b Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;
c Collaborative Innovation Center for Quantum Matter, Beijing 100871, China
Abstract:
Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moiré patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moiré patterns while both sublattices are seen in regions with moiré pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.
Key words： scanning tunneling microscopy few-layer graphene stacking order step edge
DOI: 10.1088/1674-1056/23/11/116801
